منابع مشابه
40Ar/39Ar and ion microprobe U^Pb zircon dating of the Erongo, Damaraland, Namibia
The Erongo subvolcanic center in Namibia is the largest composite, bimodal complex in the Mesozoic Etendeka igneous province of Namibia. This study of 40Ar/39Ar and high spatial resolution U^Pb zircon dating demonstrates that emplacement of the various igneous units at Erongo took place within a time span equivalent to or shorter than geochronologically resolvable age differences (ca. 2 Ma), an...
متن کاملNanoscale occurrence of Pb in an Archean zircon
We report, for the first time, a direct, atomic-scale characterization of Pb in zircon (4.4–3.1 Ga) from the early Archean Yilgarn craton in Australia using high-resolution HAADF-STEM. Two forms of Pb have been identified: Pb concentrated at 3 atom% as a nanoscale patch in zircon structure, and Pb concentrated within the amorphous domain created by fission fragment damage. The first result sugg...
متن کاملOxygen Isotopic Composition and U-Pb Discordance in Zircon
We have investigated U-Pb discordance and oxygen isotopic composition of zircon using high– spatial resolution !O measurement by ion microprobe. !O in both concordant and discordant zircon grains provides an indication of the relationship between fluid interaction and discordance. Our results suggest that three characteristics of zircon are interrelated: (1) U-Pb systematics and concomitant age...
متن کاملA scanning ion imaging investigation into the micron - scale U - Pb systematics in a 1 complex lunar zircon 2 3
12 Abstract 13 14 The full U-Pb isotopic systematics in a complex lunar zircon ‘Pomegranate’ 15 from lunar impact breccia 73235 have been investigated by the development of a 16 novel Secondary Ion Mass Spectrometry (SIMS) scanning ion imaging (SII) 17 technique. This technique offers at least a four-fold increase in analytical spatial 18 resolution over traditional SIMS analyses in zircon. Res...
متن کاملAvoiding dislocations in ion-implanted
Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applic...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2003
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927603443183